Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3294624
Reference31 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
4. Characteristics of long wavelength InGaN quantum well laser diodes
5. Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers
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