DX centers and persistent photoconductivity in CdTe–In films-Reference-Cited by-同舟云学术

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DX centers and persistent photoconductivity in CdTe–In films

Published:2000-02 Issue:11 Volume:113 Page:621-625
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Rivera-Alvarez Z,Hernández L,Becerril M,Picos-Vega A,Zelaya-Angel O,Ramı́rez-Bon R,Vargas-Garcı́a J.R

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference23 articles.

1. Writing erasable metallic patterns in insulating AlxGa1−xAs:DX

2. Diffraction from optically written persistent plasma gratings in doped compound semiconductors

3. DX centres in CdZnTe:Cl and their applications

4. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs

5. Deep donor levels (DXcenters) in III‐V semiconductors

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1. Structural, morphological, optical and electrical properties of e-beam deposited nanocrystalline CdTe:Cu alloy thin films from mechanical alloyed samples;Applied Surface Science;2018-08

2. Electronic defects in the halide antiperovskite semiconductor Hg3Se2I2;Physical Review B;2017-10-05

3. Charge Transport and Observation of Persistent Photoconductivity in Tl6SeI4 Single Crystals;The Journal of Physical Chemistry Letters;2017-03-22

4. Persistent photoconductivity of amorphous Hg0.78Cd0.22Te:In films;Journal of Semiconductors;2016-10

5. Dipolar-Modulated Charge-Doped Trilayer Organic Semiconductor n-n Heterojunction;Small;2012-01-18

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