Electronic defects in the halide antiperovskite semiconductor Hg3Se2I2-Reference-Cited by-同舟云学术

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Electronic defects in the halide antiperovskite semiconductor Hg3Se2I2

Published:2017-10-05 Issue:16 Volume:96 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kim Joon-Il,Peters John A.,He Yihui,Liu Zhifu,Das Sanjib,Kontsevoi Oleg Y.,Kanatzidis Mercouri G.,Wessels Bruce W.

Funder

U.S. Department of Homeland Security

National Science Foundation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.96.165201/fulltext

Reference25 articles.

1. Electron trapping nonuniformity in high-pressure-Bridgman-grown CdZnTe

2. Effect of Te precipitates on the performance of CdZnTe detectors

3. Investigation of CdZnTe crystal defects using scanning probe microscopy

4. Mercury and antimony chalcohalide semiconductors as new candidates for radiation detection applications at room temperature

5. An Unusual Crystal Growth Method of the Chalcohalide Semiconductor, β-Hg3S2Cl2: A New Candidate for Hard Radiation Detection

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Designing antiperovskite derivatives via atomic-position splitting for photovoltaic applications;Materials Horizons;2024

2. Controlling the Vapor Transport Crystal Growth of Hg3Se2I2 Hard Radiation Detector Using Organic Polymer;Crystal Growth & Design;2019-03-05

3. Deep Level and Near‐Band‐Edge Recombination in Semiconducting Antiperovskite Hg 3 Se 2 I 2 Single Crystals;Advanced Optical Materials;2018-09-05

4. Synthesis, Structure, and Optical Properties of Antiperovskite-Derived Ba2MQ3X (M = As, Sb; Q = S, Se; X = Cl, Br, I) Chalcohalides;Inorganic Chemistry;2018-01-08

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