Charge Transport and Observation of Persistent Photoconductivity in Tl6SeI4 Single Crystals-Reference-Cited by-同舟云学术

Charge Transport and Observation of Persistent Photoconductivity in Tl6SeI4 Single Crystals

Published:2017-03-22 Issue:7 Volume:8 Page:1538-1544
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Das Sanjib¹^ORCID,Peters John A.¹²,Lin Wenwen³,Kostina Svetlana S.¹,Chen Pice¹^ORCID,Kim Joon-Il¹,Kanatzidis Mercouri G.¹³^ORCID,Wessels Bruce W.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States

2. Department of Chemistry and Physics, Chicago State University, Chicago, Illinois 60628, United States

3. Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States

Funder

Office of Defense Nuclear Nonproliferation

Science and Technology Directorate

Radiation Monitoring Devices Inc.

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.7b00336

Reference33 articles.

1. Crystal growth in LiGaSe2 for semiconductor radiation detection applications

2. Growth and characterization of CdMnTe by the vertical Bridgman technique

3. Advances in the crystal growth of semi-insulating CdZnTe for radiation detector applications

4. Radiation detector materials: An overview

5. Electron trapping nonuniformity in high-pressure-Bridgman-grown CdZnTe

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