Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures-Reference-Cited by-同舟云学术

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Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures

Published:2003-05 Issue:6 Volume:126 Page:333-337
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Mouillet Robert,de Vaulchier Louis-Anne,Deleporte Emmanuelle,Guldner Yves,Travers Laurent,Harmand Jean-Christophe

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference28 articles.

1. Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE

2. Discrete and continuous spectrum of nitrogen-induced bound states in heavily dopedGaAs1−xNx

3. Theory of electronic structure evolution in GaAsN and GaPN alloys

4. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

5. GaAs-based long-wavelength lasers

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2. Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers;Semiconductor Science and Technology;2020-10-06

3. Low temperature photo-induced carrier dynamics in the GaAs 0.985 N 0.015 alloy;Journal of Alloys and Compounds;2017-03

4. Performance of 1 eV GaNAsSb-based photovoltaic cell on Si substrate at different growth temperatures;Progress in Photovoltaics: Research and Applications;2017-02-01

5. Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations;Journal of Alloys and Compounds;2016-12

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