Performance of 1 eV GaNAsSb-based photovoltaic cell on Si substrate at different growth temperatures

Author:

Yurong Nelvin Leong1ORCID,Tan Kian Hua1,Loke Wan Kai1,Wicaksono Satrio1,Li Daosheng1,Yoon Soon Fatt1,Sharma Prithu2,Milakovich Tim2,Bulsara Mayank T.2,Fitzgerald Eugene A.2

Affiliation:

1. School of Electrical and Electronic Engineering; Nanyang Technological University; Nanyang Avenue Singapore 639798 Singapore

2. Massachusetts Institute of Technology; 77 Massachusetts Avenue Cambridge MA 02139 USA

Funder

Singapore-MIT Alliance for Research and Technology Centre

National Research Foundation Singapore

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference31 articles.

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2. Current matching for high efficiency multi-junction solar cells;Bedair;Journal of Electrical & Electronics Systems,2012

3. Friedman DJ Kurtz SR Geisz JF Analysis of the GaInP/GaAs/1-eV/Ge cell and related structures for terrestrial concentrator application Photovoltaic Specialists Conference. Conference record of the 29th IEEE 2002

4. Sabnis V Yuen H Wiemer M High-efficiency multijunction solar cells employing dilute nitrides AIP Conference Proceedings, 2012

5. Sasaki K Agui T Nakaido K Takahashi N Onitsuka R Takamoto T Development of InGaP/GaAs/InGaAs inverted triple junction concentrator solar cells AIP Conference Proceedings, 2013 1556 22 25

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