Effective suppression of deep interface states and dielectric trapping in SiNx/GaN metal-insulator-semiconductor structures by a SiOxNy interfacial layer grown by plasma-enhanced atomic layer deposition-Reference-Cited by-同舟云学术

Effective suppression of deep interface states and dielectric trapping in SiNx/GaN metal-insulator-semiconductor structures by a SiOxNy interfacial layer grown by plasma-enhanced atomic layer deposition

Published:2023-01 Issue: Volume:607 Page:154937
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Deng Kexin,Wang Xinhua,Huang Sen,Jiang Qimeng,Yin Haibo,Fan Jie,Jing Guanjun,Wang Yingjie,Luan Tiantian,Wei Ke,Zheng Yingkui,Shi Jingyuan,Liu Xinyu

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference33 articles.

1. GaN-on-Si Power Technology: Devices and Applications;Chen;IEEE Trans. Electron Devices,2017

2. A survey of Gallium Nitride HEMT for RF and high power applications;Fletcher;Superlatt. Microstruct.,2017

3. Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer;Zhang;IEEE Trans. Electron Devices,2016

4. AlGaN/GaN MIS-HEMTs of Very-Low Vth Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator;Zhang;IEEE Electron Device Lett.,2017

5. Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer;Wang;IEEE Electron Device Lett.,2015

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