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Twist angle modulated electronic properties and band alignments of hydrogen-terminated diamond (1 1 1)/hexagonal boron nitride heterostructures

  • Published:2023-03 Issue: Volume:614 Page:156245
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Wang Boyu,Ning Jing,Zhang Jincheng,Zhang Chi,Wang Dong,Hao Yue

Funder

National Natural Science Foundation of China

Xidian University

Fundamental Research Funds for the Central Universities

National Science and Technology Planning Project

National Science Fund for Distinguished Young Scholars

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference38 articles.

1. Progress toward diamond power field-effect transistors;Geis;Phys. Status Solidi A,2018

2. Blocking characteristics of diamond junctions with a punch-through design;Hiraiwa;J. Appl. Phys.,2015

3. High carrier mobility in single-crystal plasma-deposited diamond;Isberg;Science,2002

4. High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures;Sasama;Nat. Electron.,2022

5. Progress in efficient doping of high aluminum-containing group III-nitrides;Liang;Appl. Phys. Rev.,2018

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