Extended study of the atomic step-terrace structure on hexagonal SiC (0001) by chemical-mechanical planarization-Reference-Cited by-同舟云学术

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Extended study of the atomic step-terrace structure on hexagonal SiC (0001) by chemical-mechanical planarization

Published:2013-11 Issue: Volume:284 Page:195-206
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Shi Xiaolei,Pan Guoshun,Zhou Yan,Zou Chunli,Gong Hua

Funder

National Key Basic Research Program of China

National Natural Science Foundation of China

International Science & Technology Cooperation Program of China

Tsinghua University Initiative Scientific Research Program

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference23 articles.

1. Present status and future prospect of wide gap semiconductor high-power devices;Okumura;Japanese Journal of Applied Physics,2006

2. High-voltage 4H-SiC Schottky barrier diodes fabricated on (03-38) with closed micropipes;Kimoto;Japanese Journal of Applied Physics,2003

3. Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials;Aida;Current Applied Physics,2012

4. Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications

5. Silicon Carbide Microsystems for Harsh Environments;Wijesundara,2011

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