Superior thermal stability of Ta/TaN bi-layer structure for copper metallization-Reference-Cited by-同舟云学术

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Superior thermal stability of Ta/TaN bi-layer structure for copper metallization

Published:2006-11 Issue:3 Volume:253 Page:1666-1672
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Xie Qi,Qu Xin-Ping,Tan Jing-Jing,Jiang Yu-Long,Zhou Mi,Chen Tao,Ru Guo-Ping

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

2. Failure mechanism of Ta diffusion barrier between Cu and Si

3. Annealing effects of tantalum films on Si and SiO2/Si substrates in various vacuums

4. Evidence of heteroepitaxial growth of copper on beta-tantalum

5. Solid-state amorphization at tetragonal-Ta/Cu interfaces

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1. Effect of 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA) on Cu/Ta chemical mechanical planarization (CMP) in the barrier layer: A novel complexing agent and the dual role on Cu;Surfaces and Interfaces;2024-03

2. Triple Synergism Effect of Ammonium Nitrilotriacetate on the Chemical Mechanical Polishing Performance of Ruthenium Barrier Layers;Small;2024-01-21

3. Structure of Ta/TaN Nanolayered Systems Investigated by Transmission Electron Microscopy;Defect and Diffusion Forum;2023-12-12

4. The Role of Graphene Defects in Graphene-Coated Copper Oxidation Behavior;Transactions of the Indian Institute of Metals;2023-10-15

5. Materials Quest for Advanced Interconnect Metallization in Integrated Circuits;Advanced Science;2023-06-15

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