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Properties of HfO2/ultrathin SiO2/Si structures and their comparison with Si MOS structures passivated in KCN solution

  • Published:2014-05 Issue: Volume:301 Page:34-39
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Pinčík Emil,Kobayashi Hikaru,Matsumoto Taketoshi,Takahashi Masao,Mikula Milan,Brunner Róbert

Funder

Japan Society

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies;Materials Science and Engineering: B;2022-11

2. Effect of High-Pressure Annealing on ALD HfO2/Si Interfacial Layer;Journal of Nanoelectronics and Optoelectronics;2016-04-01

3. Interaction of KCN solutions with Si-based thin films;Journal of the Chinese Advanced Materials Society;2015-03-02

4. FT IR spectroscopy of silicon oxide and HfSiOx layer formation;Applied Surface Science;2014-09
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