ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies-Reference-Cited by-同舟云学术

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ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies

Published:2022-11 Issue: Volume:285 Page:115964
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Martínez-Puente M.A.,Horley P.,Aguirre-Tostado F.S.,López-Medina J.,Borbón-Nuñez H.A.,Tiznado H.,Susarrey-Arce A.,Martínez-Guerra E.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference66 articles.

1. Development of hafnium based high-k materials—a review;Choi;Mater. Sci. Eng. R Rep.,2011

2. Characteristics of HfO2 thin films grown by plasma atomic layer deposition;Kim;Appl. Phys. Lett.,2005

3. Initial reaction of HfO2 atomic layer deposition on silicon surfaces with different oxygen levels: a density functional theory study;Ren;Thin Solid Films,2007

4. 45nm high-k+metal gate strain-enhanced transistors;Auth;Intel Technol. J.,2008

5. Linearity improvement of HfOx-based memristor with multilayer structure;Jiang;Mater. Sci. Semicond. Process.,2021

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1. Modeling the influence of the duration of water vapor pulses on the properties of hafnium oxide synthesized by atomic layer deposition method;Vacuum;2024-11

2. Preparation and patterning of HfO2 film via sol–gel method and resistive switching effect of Pt/HfO2/LaNiO3;Materials Science in Semiconductor Processing;2024-08

3. Prospects of silicide contacts for silicon quantum electronic devices;Applied Physics Letters;2024-07-01

4. Co-DTC: Concentric Trench-Based Integrated Capacitors for Advanced Chiplet-Based Platforms;Proceedings of the Great Lakes Symposium on VLSI 2024;2024-06-12

5. Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films;Physica Scripta;2024-04-23

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