Thermal stability of the HfO2∕SiO2 interface for sub-0.1μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

Thermal stability of the HfO2∕SiO2 interface for sub-0.1μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy

Published:2004-12 Issue:11 Volume:96 Page:6362-6369
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Barrett N.,Renault O.,Damlencourt J.-F.,Martin F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1809769

Reference17 articles.

1. HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

2. Chemistry and band offsets of HfO2 thin films for gate insulators

3. Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate films

4. Comparative study of defect energetics in HfO2 and SiO2

5. Advanced Characterization of High-κ Materials Interfaces by High-Resolution Photoemission using Synchrotron Radiation

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