Vacancy profiles and clustering in light-ion-implanted GaN and ZnO
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference34 articles.
1. Depth distribution of B implanted in Si after excimer laser irradiation
2. Production and annealing of electron irradiation damage in ZnO
3. Electrical isolation of ZnO by ion bombardment
4. Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
5. Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO
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2. Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites;Physical Review Letters;2017-11-09
3. Evaluation of the concentration of point defects in GaN;Scientific Reports;2017-08-24
4. The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures;Journal of Applied Physics;2016-05-14
5. Structural, diffused reflectance and photoluminescence study of cerium doped ZnO nanoparticles synthesized through simple sol–gel method;Optik;2015-11
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