Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO-Reference-Cited by-同舟云学术

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Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO

Published:2006-10-23 Issue:16 Volume:74 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Børseth T. Moe,Tuomisto F.,Christensen J. S.,Skorupa W.,Monakhov E. V.,Svensson B. G.,Kuznetsov A. Yu.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.161202/fulltext

Reference18 articles.

1. ZnO devices: Photodiodes and p-type field-effect transistors

2. Blue Light-Emitting Diode Based on ZnO

3. Growth of 2 inch ZnO bulk single crystal by the hydrothermal method

4. Reactions of Lithium as a donor and an acceptor in ZnO

5. Origin ofp-type doping difficulty in ZnO: The impurity perspective

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1. Ion beam-induced defects in ZnO: A radiation hard metal oxide;Metal Oxide Defects;2023

2. Neutron irradiation induced defects in oxides and their impact on the oxide properties;Journal of Applied Physics;2021-06-01

3. Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution;Journal of Applied Physics;2019-02-21

4. Oxygen Exchange Kinetics of SrTiO3 Single Crystals: A Non-Destructive, Quantitative Method;Crystal Research and Technology;2018-03-15

5. Structural and optical studies of Pr implanted ZnO films subjected to a long-time or ultra-fast thermal annealing;Thin Solid Films;2017-12

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