Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution-Reference-Cited by-同舟云学术

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Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution

Published:2019-02-21 Issue:7 Volume:125 Page:075703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Azarov Alexander¹²^ORCID,Aarseth Bjørn L.¹,Vines Lasse¹^ORCID,Hallén Anders³^ORCID,Monakhov Edouard¹,Kuznetsov Andrej¹

Affiliation:

1. Department of Physics, Centre for Material Science and Nanotechnology, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo, Norway

2. National Centre for Nuclear Research, A. Soltana 7, 05-400 Otwock-Swierk, Poland

3. Royal Institute of Technology, KTH-ICT, Electrum 229, SE-164 40 Stockholm, Sweden

Funder

Research Council of Norway

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5083226

Reference51 articles.

1. A comprehensive review of ZnO materials and devices

2. ZnO nanostructures for optoelectronics: Material properties and device applications

3. GaN: Processing, defects, and devices

4. Origin ofp-type doping difficulty in ZnO: The impurity perspective

5. The microscopic origin of the doping limits in semiconductors and wide-gap materials and recent developments in overcoming these limits: a review

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