The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures-Reference-Cited by-同舟云学术

The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures

Published:2016-05-14 Issue:18 Volume:119 Page:185305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lindberg P. F.¹,Lipp Bregolin F.²^ORCID,Wiesenhütter K.²,Wiesenhütter U.²,Riise H. N.¹,Vines L.¹,Prucnal S.²^ORCID,Skorupa W.²,Svensson B. G.¹,Monakhov E. V.¹

Affiliation:

1. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo, Norway

2. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany

Funder

The Norwegian Research Centre for Solar Cell Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4948666

Reference54 articles.

1. Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)

2. Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing

3. Transparent conducting oxide semiconductors for transparent electrodes

4. Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition

5. Preparation of highly transparent conductive Al-doped ZnO thin films and annealing effects on properties

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