Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation-Reference-Cited by-同舟云学术

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Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation

Published:2006-09 Issue:22 Volume:252 Page:7755-7759
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Fu Ssu-I.,Lai Po-Hsien,Tsai Yan-Ying,Hung Ching-Wen,Yen Chih-Hung,Cheng Shiou-Ying,Liu Wen-Chau

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference9 articles.

1. Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer

2. An ImprovedIn0.5Ga0.5P/GaAsDouble Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique

3. Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs -doped single heterojunction bipolar transistors using an InGaP passivation layer

4. Influences of Surface Sulfur Treatments on the Temperature-Dependent Characteristics of HBTs

5. Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of surface passivation and temperature on AlGaAs/InGaAs high-electron mobility transistor;Microelectronic Engineering;2019-06

2. Influence of Emitter-Edge-Thinning Thickness on the Heterojunction Bipolar Transistor Performance;Journal of The Electrochemical Society;2007

3. Temperature-Dependent DC Characteristics of InGaP∕GaAs Heterojunction Bipolar Transistors with Different Passivation;Journal of The Electrochemical Society;2007

4. Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

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