Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors

Published:2007 Issue:3 Volume:25 Page:691
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Fu Ssu-I,Liu Rong-Chau,Cheng Shiou-Ying,Lai Po-Hsien,Tsai Yan-Ying,Hung Ching-Wen,Chen Tzu-Pin,Liu Wen-Chau

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative analysis of dc characteristics of Ga0.5In0.5P/GaAs heterojunction bipolar devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-11

2. Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors;Solid-State Electronics;2012-06

3. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets;Semiconductors;2012-02

4. Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors;Superlattices and Microstructures;2011-10

5. On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple $\delta$-Doped Sheets;IEEE Transactions on Electron Devices;2008-11

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