Author:
Egorov K.V.,Lebedinskii Yu.Yu.,Markeev A.M.,Orlov O.M.
Funder
Russian Science Foundation
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference28 articles.
1. 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation;Govoreanu;IEDM Tech. Dig.,2011
2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures;Lee;Nat. Mat.,2011
3. Realization of vertical resistive memory (VRRAM) using cost effective 3D process;Baek;IEDM Tech. Dig.,2011
4. Crystallinity of inorganic films grown by atomic layer deposition: overview and general trends;Miikkulainen;J. Appl. Phys.,2013
5. High switching endurance in TaOx memristive devices;Yang;Appl. Phys. Lett.,2010
Cited by
37 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献