Impacts of Au-doping on the performance of Cu/HfO2/Pt RRAM devices-Reference-Cited by-同舟云学术

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Impacts of Au-doping on the performance of Cu/HfO2/Pt RRAM devices

Published:2014-10 Issue: Volume:317 Page:982-985
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Tan Tingting,Guo Tingting,Chen Xi,Li Xiaojing,Liu Zhengtang

Funder

National Natural Science Foundation of China

National Aerospace Science Foundation of China

Natural Science Basic Research Plan in Shaanxi Province of China

Fundamental Research Funds for the Central Universities

111 Project

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. Resistive switching in transition metal oxides

2. Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

3. Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted

4. The conical shape filament growth model in unipolar resistance switching of TiO2 thin film

5. Direct observation of conducting filaments on resistive switching of NiO thin films

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1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications;ACS Applied Electronic Materials;2023-12-29

2. HfO₂-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability;ACS Applied Electronic Materials;2023-12-27

3. Analog Hf_xZr_1‐xO₂ Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network;Advanced Electronic Materials;2023-12-27

4. Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO₂-Based Artificial Neurons;Nano Letters;2023-10-24

5. Enhanced resistive switching characteries in HfOx memory devices by embedding W nanoparticles;Journal of Intelligent & Fuzzy Systems;2023-08-24

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