Sub-10 nm vertical tunneling transistors based on layered black phosphorene homojunction-Reference-Cited by-同舟云学术

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Sub-10 nm vertical tunneling transistors based on layered black phosphorene homojunction

Published:2019-01 Issue: Volume:465 Page:895-901
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Li Hong^ORCID,Lu Jing

Funder

National Natural Science Foundation of China

Beijing Municipal Education Commission

Youth Innovation Foundation of North China University of Technology

Project of Talent Youth Foundation of North China University of Technology

National Materials Genome Project

National Basic Research Program of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference52 articles.

1. Two-dimensional semiconductors for transistors;Chhowalla;Nat. Rev. Mater.,2016

2. Electronics based on two-dimensional materials;Fiori;Nat. Nanotechnol.,2014

3. 2D Semiconductor FETs—projections and design for sub-10 nm VLSI;Cao;IEEE Trans. Electron. Dev.,2015

4. Device performance simulations of multilayer black phosphorus tunneling transistors;Liu;Appl. Phys. Lett.,2015

5. Theoretical study of phosphorene tunneling field effect transistors;Chang;Appl. Phys. Lett.,2015

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