Improved electrical and interfacial properties of RF-sputtered HfAlOx on n-GaAs with effective Si passivation
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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4. Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer;physica status solidi (RRL) - Rapid Research Letters;2017-07-26
5. Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer;IEEE Transactions on Electron Devices;2017-05
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