Inductively coupled plasma etching of GaAs in Cl 2 /Ar, Cl 2 /Ar/O 2 chemistries with photoresist mask-Reference-Cited by-同舟云学术

Inductively coupled plasma etching of GaAs in Cl 2 /Ar, Cl 2 /Ar/O 2 chemistries with photoresist mask

Author:

Liu Kai,Ren Xiao-min,Huang Yong-qing,Cai Shi-wei,Duan Xiao-feng,Wang Qi,Kang Chao,Li Jun-shuai,Chen Qing-tao,Fei Jia-rui

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Natural Science Foundation of Beijing

Program of Key International Science and Technology Cooperation Projects

111 Project of China

Program for Changjiang Scholars and Innovative Research Team in University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

4. (Cl2:Ar) ICP/RIE dry etching of Al(Ga) Sb For AlSb/InAs HEMTs;Lefebvre,2007

5. Recessed-gate GaN MESFET using ICP-RIE for high temperature microwave applications;Lee,2000

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