SiCl4reactive ion etching for GaAs optical waveguides
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx5/50/23133/01074325.pdf?arnumber=1074325
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Inductively coupled plasma etching of GaAs in Cl 2 /Ar, Cl 2 /Ar/O 2 chemistries with photoresist mask;Applied Surface Science;2015-11
2. Realization of sub-micron patterns on GaAs using a HSQ etching mask;Microelectronic Engineering;2005-04
3. Fabrication of III-V/polymer optical nanowires and nanogratings for nanophotonic devices;SPIE Proceedings;2005-03-25
4. Reactive ion etching of AlInGaP and GaAs in SiCl4/CH4/Ar-based plasmas;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-03
5. Extremely smooth sidewalls for GaAs/AlGaAs ridge waveguides;Electronics Letters;1993
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