The effect of Ar flow rate in the growth of SiGe:H thin films by PECVD
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference24 articles.
1. Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors
2. A super junction SiGe low-loss fast switching power diode
3. Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution
4. A direct correlation between film structure and solar cell efficiency for HWCVD amorphous silicon germanium alloys
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of the effect of the deposition RF power on the characteristics of microcrystalline Silicon-Germanium thin films produced by PECVD;MRS Advances;2018-12
2. Role of a-Si:H buffer layer at the p/i interface and band gap profiling of the absorption layer on enhancing cell parameters in hydrogenated amorphous silicon germanium solar cells;Optik;2017-05
3. Reduction in Photocurrent Loss and Improvement in Performance of Single Junction Solar Cell Due to Multistep Grading of Hydrogenated Amorphous Silicon Germanium Active Layer;Silicon;2017-04-12
4. Self-assembled Ge/Si nanoislands: effect of argon flow and radio frequency power;Physica Scripta;2014-01-29
5. The microstructure and optical properties of crystallized hydrogenated silicon films prepared by very high frequency glow discharge;Applied Surface Science;2011-08
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