A super junction SiGe low-loss fast switching power diode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference25 articles.
1. The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages
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4. Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities
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