Author:
Naugarhiya Alok,Dubey Shashank,Kondekar Pravin N.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. X. Chen, Semiconductor power devices with alternating conductivity type high voltage breakdown regions, uS Patent 5216275, June 1, 1993.
2. Theory of semiconductor superjunction devices;Fujihira;Jpn. J. Appl. Phys.,1997
3. Optimization of specific on-resistance of balanced symmetric superjunction MOSFETs based on a better approximation of ionization integral;Huang;IEEE Trans. Electron Dev.,2012
4. Study of the degradation of the breakdown voltage of a super-junction power MOSFET due to charge imbalance;Kondekar;J. Korean Phys. Soc.,2006
5. Theory of a novel voltage-sustaining layer for power devices;Chen;Microelectron. J.,1998
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