Self-assembled Ge/Si nanoislands: effect of argon flow and radio frequency power
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/89/i=2/a=025804/pdf
Reference16 articles.
1. Silicon germanium heterostructures in electronics: the present and the future
2. Positioning of self-assembled Ge islands on stripe-patterned Si(001) substrates
3. Kinetics of Si capping process of Ge/Si(0 0 1) quantum dots
4. Spontaneous nanostructural island formation and layer-to-island mass transport in Ge layers on Si(111) surfaces
5. The effect of Ar flow rate in the growth of SiGe:H thin films by PECVD
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1. Morphological Control in Gold Nanostructures Synthesis Process;International Journal of Nanoscience;2021-04-29
2. Structure and optical properties of Ge/Si quantum dots formed by driving the evolution of Ge thin films via thermal annealing;Japanese Journal of Applied Physics;2018-03-20
3. Effects of period number and sputtering time on optical properties of Si/Ge multilayer films deposited by magnetron sputtering;Journal of Materials Science: Materials in Electronics;2017-10-25
4. Effects of post-deposition annealing on crystalline state of GeSn thin films sputtered on Si substrate and its application to MSM photodetector;Materials Research Express;2016-10-10
5. Formation of nanocrystalline GeSn thin film on Si substrate by sputtering and rapid thermal annealing;Superlattices and Microstructures;2016-10
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