Preparation of clean and well-ordered hydrogen-terminated Si(110)-(1×1) surfaces and the measurements of vibrational modes-Reference-Cited by-同舟云学术

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Preparation of clean and well-ordered hydrogen-terminated Si(110)-(1×1) surfaces and the measurements of vibrational modes

Published:2013-02 Issue: Volume:267 Page:90-92
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Suto S.,Matsui K.,Matsushita S.Y.,Kato H.,Nakaya H.,Taoka T.,Kasuya A.,Yamada T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. IEEE International Electron Devices Meeting Technical Digest;Sugawara,2001

2. Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics

3. Atomic-scale analysis of hydrogen-terminated Si(110) surfaces after wet cleaning

4. Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface

5. Surface phonons of clean and hydrogen terminated Si(1 1 0) surfaces

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropic surface phonon dispersion of a deuterium-terminated Si(110)-(1 × 1) surface studied by high-resolution electron-energy-loss spectroscopy and first-principles calculations: Isotope effect;Surface Science;2020-02

2. Anisotropic electronic band structure of intrinsic Si(110) studied by angle-resolved photoemission spectroscopy and first-principles calculations;Physical Review B;2017-09-14

3. Wet chemical preparation and isotope exchange process of H/D-terminated Si(111) and Si(110) studied by adsorbate vibrational analysis;Japanese Journal of Applied Physics;2017-01-12

4. Surface phonon dispersion on hydrogen-terminated Si(110)-(1 × 1) surfaces studied by first-principles calculations;The Journal of Chemical Physics;2015-12-07

5. Morphology and atomic structure of hydrogen-terminated Si(110)-(1 × 1) surfaces prepared by a wet chemical process;Surface Science;2015-02

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