Surface phonon dispersion on hydrogen-terminated Si(110)-(1 × 1) surfaces studied by first-principles calculations
Author:
Affiliation:
1. Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
2. Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
Funder
Tohoku University Instisute for International Advanced Research and Education
Ministry of Education, Culture, Sports, Science, and Technology (MEXT)
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4936656
Reference37 articles.
1. Density functional calculation of semiconductor surface phonons
2. Phonons and related crystal properties from density-functional perturbation theory
3. Surface Phonons
4. Surface phonons of Si(111):H-(1 × 1) and Si(111):As-(1 × 1)
5. Ab initio calculation of phonons in GaP(110) and InAs(110) and trends within III–V(110) surfaces
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