Spontaneous transition from epitaxially constrained to equilibrium Ge nanocrystals on silicon-on-insulator ()
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference9 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Shape transition in growth of strained islands: Spontaneous formation of quantum wires
3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
4. Response of a strained semiconductor structure
5. Oblique stacking of three-dimensional dome islands in Ge/Si multilayers
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1. Quantum dot molecule formation in Si-Ge heteroepitaxy on pit–patterned Si(001) substrate: A theoretical study;Journal of Crystal Growth;2020-04
2. Design of free patterns of nanocrystals with ad hoc features via templated dewetting;Applied Physics Letters;2012-07-02
3. Ge dots embedded in SiO2obtained by oxidation of Si/Ge/Si nanostructures;Nanotechnology;2006-09-11
4. Assembly of Ge nanocrystals on SiO2via a stress-induced dewetting process;Nanotechnology;2006-06-30
5. Mechanisms of thermally induced dewetting of ultrathin silicon-on-insulator;Applied Physics Letters;2006-04-03
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