Oblique stacking of three-dimensional dome islands in Ge/Si multilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1357214
Reference12 articles.
1. Hilbert-space structure of a solid-state quantum computer: Two-electron states of a double-quantum-dot artificial molecule
2. Quantum Dots
3. Synthesis and Characterization of InP Quantum Dots
4. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
5. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
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1. Strain-Engineered Arrays of InAs Quantum Dots on GaAs(001): Epitaxial Growth and Modeling;Nanoscience and Nanotechnology Letters;2017-07-01
2. Electronic spectra and lateral photocurrent in Si/Ge heterostructures with quantum dots;Frontiers in Optics 2015;2015
3. Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface;Semiconductor Physics Quantum Electronics and Optoelectronics;2014-11-10
4. Surface potential and field effect in structures with Ge-nanoclusters grown on Si(100) surface;SPIE Proceedings;2014-08-28
5. Electrical and photovoltaic properties of self-assembled Ge nanodomes on Si(001);Physical Review B;2012-12-26
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