Ge dots embedded in SiO2obtained by oxidation of Si/Ge/Si nanostructures
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/17/i=19/a=022/pdf
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3. Study on the formation mechanism of bismuth-mediated Ge nanodots fabricated by vacuum evaporation;Japanese Journal of Applied Physics;2019-05-29
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