Photoluminescence study of Si/Ge quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference8 articles.
1. Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes
2. Optical study of germanium nanostructures grown on a Si(118) vicinal substrate
3. Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands
4. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
5. Band alignments and photon-induced carrier transfer from wetting layers to Ge islands grown on Si(001)
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1. The Study of Morphology and Photoelectric Sensitivity of Low-Temperature Ge/Si Heterostructures with Ge Quantum Dots;Journal of Nanoelectronics and Optoelectronics;2015-03-01
2. Photoluminescence Characteristics of Silicon Quantum Dots Nanoparticles (SQDNs) Embedded on Glass Surface;Procedia Engineering;2013
3. Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity;Nanoscale Research Letters;2012-07-23
4. Growth evolution of Ge quantum dot modulated by the atom bombardment during ion beam sputtering deposition;Acta Physica Sinica;2012
5. XAS/EXAFS studies of Ge nanoparticles produced by reaction between Mg2Ge and GeCl4;Journal of Solid State Chemistry;2011-09
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