Band alignments and photon-induced carrier transfer from wetting layers to Ge islands grown on Si(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1356454
Reference17 articles.
1. Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation
2. Reduced critical thickness and photoluminescence line splitting in multiple layers of self-assembled Ge/Si islands
3. Modified Stranski–Krastanov growth in stacked layers of self-assembled islands
4. Vertically self-organized Ge/Si(001) quantum dots in multilayer structures
5. Morphology and photoluminescence of Ge islands grown on Si(001)
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