Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity-Reference-Cited by-同舟云学术

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

Published:2012-07-23 Issue:1 Volume:7 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Yuryev Vladimir A,Arapkina Larisa V,Storozhevykh Mikhail S,Chapnin Valery A,Chizh Kirill V,Uvarov Oleg V,Kalinushkin Victor P,Zhukova Elena S,Prokhorov Anatoly S,Spektor Igor E,Gorshunov Boris P

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-7-414.pdf

Reference51 articles.

1. Pchelyakov OP, Bolkhovitjanov YB, Dvurechenskiĭ AV, Nikiforov AI, Yakimov AI, Voigtländer B: Molecular beam epitaxy of silicon–germanium nanostructures. Thin Solid Films 2000, 367: 75. 10.1016/S0040-6090(00)00667-2

2. Pchelyakov OP, Bolkhovitjanov YB, Sokolov LV, Nikiforov AI, Yakimov AI, Voigtländer B, Dvurechenskiĭ AV: Silicon–germanium nanostructures with quantum dots: Formation mechanisms and electrical properties. Semicond 2000, 34: 1229. 10.1134/1.1325416

3. Yakimov AI, Dvurechenskii AV, Kirienko VV, Yakovlev YI, Nikiforov AI: Long-range Coulomb interaction in arrays of self-assembled quantum dots. Phys Rev B 2000, 61: 10868. 10.1103/PhysRevB.61.10868

4. Drexler H, Leonard D, Hansen W, Kotthaus JP, Petroff PM: Spectroscopy of quantum levels in charge-tunable InGaAs quantum dots. Phys Rev Lett 1994, 73: 2252. 10.1103/PhysRevLett.73.2252

5. Lipparini E, Barberan N, Barranco M, Pi M, Serra L: Far-infrared edge modes in quantum dots. Phys Rev B 1997, 56: 12375. 10.1103/PhysRevB.56.12375

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low‐temperature MBE‐grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations;Journal of Raman Spectroscopy;2022-02-21

2. The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy;Semiconductor Science and Technology;2020-03-05

3. Local structure of Ge quantum dots determined by combined numerical analysis of EXAFS and XANES data;Journal of Synchrotron Radiation;2016-01-01

4. Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C;Nanoscale Research Letters;2015-07-16

5. Tracking atomic processes throughout the formation of heteroepitaxial interfaces;Crystal Research and Technology;2015-05-15