Thermodynamic evidence for surfactant behaviour of Sb in the growth of Ge on Si(001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference21 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Local dimer exchange in surfactant-mediated epitaxial growth
3. Surfactant-controlled solid phase epitaxy of germanium on silicon
4. Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy
5. X-ray photoelectron-diffraction study of intermixing and morphology at the Ge/Si(001) and Ge/Sb/Si(001) interface
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3. Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-coveredSi(001)from first-principles total-energy calculations;Physical Review B;2006-08-01
4. Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study;Surface Science;2006-05
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