Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-coveredSi(001)from first-principles total-energy calculations
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.075303/fulltext
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1. Surfactants in epitaxial growth
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5. Growth mechanisms in Ge/Si(111) heteroepitaxy with and without Bi as a surfactant
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