Effect of interfaces on quantum confinement in Ge dots grown on Si surfaces with a SiO2 coverage
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference34 articles.
1. Interband absorption in charged Ge/Si type-II quantum dots
2. Mid-infrared photocurrent measurements on self-assembled Ge dots in Si
3. Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes
4. Optical properties of Ge self-organized quantum dots in Si
5. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
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2. Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxially Grown on Ge;ACS Applied Electronic Materials;2021-09-23
3. Spectro-ellipsometric modeling and optimization of two-dimensional Ge layer and three-dimensional Ge dot/island structures on SiO2 substrates;Japanese Journal of Applied Physics;2021-01-01
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5. Formation of submicron- and micron-sized SiGe and Ge particles on Si substrates using dewetting;Journal of Physics: Conference Series;2020-03-01
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