A new theoretical approach to adsorption–desorption behavior of Ga on GaAs surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference13 articles.
1. Reconstruction and defect structure of vicinal GaAs(001) and AlxGa1−xAs(001) surfaces during MBE growth
2. Dependence of Ga Desorption Rate upon the Step Density in Molecular Beam Epitaxy of GaAs
3. Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures
4. Ga-adatom-induced As rearrangement during GaAs epitaxial growth: Self-surfactant effect
5. Stable Microstructures on a GaAs(111)A Surface: the Smallest Unit for Epitaxial Growth
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