Mechanism of ion-assisted etching of silicon by fluorine atoms
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference11 articles.
1. Surface processes in plasma-assisted etching environments
2. Gaseous products from the reaction of XeF2with silicon
3. Chemical sputtering of fluorinated silicon
4. The etching of W(111) with XeF2
5. Electronic structure of the annealed Ge(111) and Si(111) surfaces: Similarities in local bonding
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2. Fluorine–Silicon Surface Reactions during Cryogenic and Near Room Temperature Etching;The Journal of Physical Chemistry C;2014-12-10
3. Black silicon method: X. A review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment;Journal of Micromechanics and Microengineering;2009-02-02
4. Structure of surface reaction layer of poly-Si etched by fluorocarbon plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-03
5. Atomistic simulations of Ar+-ion-assisted etching of silicon by fluorine and chlorine;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-01
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