Author:
Zhao W.S.,Portal J.M.,Kang W.,Moreau M.,Zhang Y.,Aziza H.,Klein J.-O.,Wang Z.H.,Querlioz D.,Deleruyelle D.,Bocquet M.,Ravelosona D.,Muller C.,Chappert C.
Subject
Artificial Intelligence,Computer Networks and Communications,Hardware and Architecture,Theoretical Computer Science,Software
Reference42 articles.
1. Pairing of cation vacancies and gap-state creation in TiO2 and HfO2;Ahn;Appl. Phys. Lett.,2007
2. H. Aziza, M. Bocquet, J.-M. Portal, C. Muller, Evaluation of OxRAM cell variability impact on memory performances through electrical simulations, in: Non-Volatile Memory Technology Symposium, NVMTS, January 2011.
3. H. Aziza, M. Bocquet, J.-M. Portal, C. Muller, Bipolar OxRRAM memory array reliability evaluation based on fault injection, in: Design and Test Workshop, IDT, December 2011.
4. I.G. Baek, et al., Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application, in: Procs. of IEEE IEDM, December 2005, pp. 750–753.
5. C. Cagli, et al., Experimental and theoretical study of electrode effects in HfO2 based RRAM, in: IEEEIEDM Tech. Dig, 2011.
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