Evaluation of OxRAM cell variability impact on memory performances through electrical simulations
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/6129571/6137079/06137089.pdf?arnumber=6137089
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Oxide-based Resistive RAM Analog Synaptic Behavior Assessment for Neuromemristive systems;Memristors - the Fourth Fundamental Circuit Element - Theory, Device, and Applications [Working Title];2023-09-29
2. STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance;IEEE Transactions on Device and Materials Reliability;2022-12
3. STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability;2022 IEEE International Symposium on Circuits and Systems (ISCAS);2022-05-28
4. Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State;Electronics;2021-09-10
5. Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability;Journal of Electronic Testing;2021-08
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