Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Link
https://link.springer.com/content/pdf/10.1007/s10836-021-05965-x.pdf
Reference48 articles.
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3. Aziza H et al (2018) A lightweight write-assist scheme for reduced RRAM variability and power. Microelectron Reliab 88:6–10
4. Aziza H et al (2018) Resistive RAMs as analog trimming elements. Solid-State Electron 142:52–55
5. Bai Y et al (2014) "Study of Multi-Level Characteristics for 3D Vertical Resistive Switching Memory". Sci Rep 4(1)
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A novel MTCMOS based 8T2M NVSRAM design for low power applications with high temperature endurance;Semiconductor Science and Technology;2024-07-19
2. STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability;2022 IEEE International Symposium on Circuits and Systems (ISCAS);2022-05-28
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