Pairing of cation vacancies and gap-state creation in TiO2 and HfO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2749858
Reference15 articles.
1. First-principles study of point defects in rutileTiO2−x
2. Vacancy and interstitial defects in hafnia
3. Unexpected magnetism in a dielectric oxide
4. Ferromagnetism Driven by Intrinsic Point Defects inHfO2
5. Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density
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