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Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon

  • Published:2004-06 Issue: Volume:338-340 Page:477-480
  • ISSN:0022-3093
  • Container-title:Journal of Non-Crystalline Solids
  • language:en
  • Short-container-title:Journal of Non-Crystalline Solids

Author:

Brüggemann R.,Brehme S.,Kleider J.P.,Gueunier M.E.,Bronner W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 18 MeV Proton Irradiation Effects on Electro-Physical Parameters of Silicon Crystals;Armenian Journal of Physics;2022

2. Steady-State Photocarrier Grating Method;Advanced Characterization Techniques for Thin Film Solar Cells;2016-07-22

3. Steady-State Photocarrier Grating Method;Advanced Characterization Techniques for Thin Film Solar Cells;2011-04-07

4. Steady-state photocarrier grating technique for the minority-carrier characterisation of thin-film semiconductors;Journal of Physics: Conference Series;2010-11-01

5. Electron irradiation effects on the properties of heavily phosphorus-doped a-Si : H films prepared from undiluted silane;Journal of Physics D: Applied Physics;2008-10-01
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