18 MeV Proton Irradiation Effects on Electro-Physical Parameters of Silicon Crystals

Abstract

A study was made of the concentration and mobility of charge carriers and the specific resistivity of n-type silicon monocrystals irradiated by 18 MeV protons. For irradiation doses of 1013 - 1014 pr/cm2, the charge carriers’ concentration and specific resistivity changed exponentially by more than two orders of magnitude, depending upon the actual dose received. The mobility of the charge carriers showed a non-monotonic dependence as a function of irradiation dose, which initially decreased, but then increased. These phenomena can be explained in terms of the formation of predominantly cluster-type radiation defects in the samples.