Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates-Reference-Cited by-同舟云学术

Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

Published:2006-06 Issue:9-20 Volume:352 Page:1913-1916
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Gueunier-Farret M.E.,Bazin C.,Kleider J.P.,Longeaud C.,Bulkin P.,Daineka D.,Dao T.H.,Roca i Cabarrocas P.,Descamps P.,Kervyn de Meerendre T.,Leempoel P.,Meaudre M.,Meaudre R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Plasma enhanced chemical vapor deposition of silicon thin films for large area electronics

2. The effects of RF plasma excitation frequency and doping gas on the deposition of polymorphous silicon thin films

3. Control of plasma chemistry for preparing highly stabilized amorphous silicon at high growth rate

4. Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition

5. Amorphous silicon films and solar cells deposited by HWCVD at ultra-high deposition rates

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2. Effect of magnetic field profile on the uniformity of a distributed electron cyclotron resonance plasma;Physics of Plasmas;2013-07

3. Generating electron cyclotron resonance plasma using distributed scheme;Applied Physics Letters;2012-08-06

4. Deposition Techniques and Processes Involved in the Growth of Amorphous and Microcrystalline Silicon Thin Films;Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells;2012

5. Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate;Journal of Applied Physics;2011-01-15