Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3536474
Reference34 articles.
1. Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements
2. Midgap density of states in hydrogenated polymorphous silicon
3. Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon
4. Structure and hydrogen bonding in plasma deposited polymorphous silicon thin films
5. Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150°C
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3. Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase;Semiconductors;2016-05
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